High temperature Aluminum nitride ceramic substrate

Aluminum nitride (AIN) is a ceramic material with the main crystal phase, and then etches the metal circuit on the aluminum nitride ceramic substrate, which is the aluminum nitride ceramic substrate. The thermal conductivity of aluminum nitride ceramic substrate is very high, and the heat dissipation and insulation performance are very outstanding. Some high-power devices, modules and other fields have obvious demand

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It is a high temperature heat resistant material. Thermal expansion system number (4.0-6.0)X10(-6)℃. Polycrystalline AlIN has a thermal conductivity of 260W (m.k), which is 5-8 times higher than that of alumina, so it has good thermal shock resistance and can withstand extreme high temperatures of 2200°C

Product descritption:

Aluminum nitride ceramic substrate Information:

Product	Aluminum nitride ceramic substrate
Material	Aluminum nitride
Purity	99%
Color	Gray
Shape	Square
Density	3.4 g/cm3

Aluminum Nitride Substrate Advantages:
• Very high thermal conductivity (> 180 W/mK)
• Low thermal expansion 4 to 6×10^-6K^-1 (between 20 and 1000°C) similar to Si, GaN,
and GaAs semiconductors
• High dielectric strength

Aluminim Nitride (AlN) material properties:

PROPERTY	ITEMS	UNIT	ALN
Physical	Color	-	Grey
	Water absorption	%	0
	Reflectivity	%	30*
Electrical	Dielectric Constant (1MHz)	-	8~10
	Dielectric Loss	*10^-4	3
	Dielectric strength	MV/m or KV/mm	>17
	Insulation/Volume resistance	Ω·cm	>10^14
Mechanical	Density after sintering (Bulk density)	g/cm3	3.26
	Flexural Strength (3 point)	Mpa	~380
	Hardness		9.3
	Elasticity (Young's Modulus)	GPa	302
	Surface Roughness	μm	0.3~0.6
	Camber	Lenght%	≤2
Thermal	Coefficient of Thermal Expansion (CTE)	ppm/°C	2~3
	Coefficient of Thermal Expansion (CTE) RT~500 °C	ppm/°C	2.5~3.5
	Thermal Conductivity (25°C)	W/m K	170

Aluminim Nitride (AlN) Application:

1.semiconductor industry.

2.Electronic original equipment.

3.Electronic components.

4.Electric locomotive equipment.

5.mechanical equipment.

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