Aluminum nitride metallized ceramic dbc aln ceramic substrate for thermoelectric research lab

Aluminum nitride copper clad plate has very high thermal conductivity and fast heat dissipation in terms of thermal characteristics, which can solve the thermal management problem well. In terms of stress, the thermal expansion coefficient is close to Si and other semiconductor materials, and the internal stress of the whole module is low, which improves the reliability of IGBT module. It is an ideal substrate material for power electronic device packaging.

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Aluminum nitride metallized ceramic dbc aln ceramic substrate for thermoelectric research lab

Performance For Industrial Ceramic

Al₂O₃ Content(%)	96	99.6
Color	White	White
Density(g/cm³)	3.72	3.85
Thermal Conductivity(W/m.K))	22.3	29.5
Thermal Expansion(x10-6/℃)	8	8.2
Dielectric Strength (at 1MHZ)	9.5	9.8
Loss Tangent(x10-4 at 1MHZ)	3	2
Volume Resistivity (ohm-m)	>10 14	>10 14
Flexural Strength(N/mm²)	350	500

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